RJK03B9DPA, K03B9 Features •High speed switching •Capable of 4.5 V gate drive •Low drive current •High density mounting •Low on-resistance RDS(on) = 8.3 mΩ typ. (at VGS = 10 V) •Pb-free •Halogen-free Absolute Maximum Ratings Drain to source voltage 30V Gate to source voltage ±20V Drain current 30A Drain peak current 120A Body-drain diode reverse drain current 30A Avalanche current 8A Avalanche energy 6.4mJ Channel dissipation 25W Channel to case thermal impedance 5°C/W Channel temperature 150°C Storage temperature –55 to +150°C
